| PART |
Description |
Maker |
| MAX2649EBT-T MAX2649 |
5GHz Low-Noise Amplifier with Shutdown
|
MAXIM[Maxim Integrated Products]
|
| HFA3424 HFA3424IB HFA3424IB96 FN4131 |
From old datasheet system
2.4GHz - 2.5GHz Low Noise Amplifier
|
INTERSIL[Intersil Corporation]
|
| 55GN01CA 55GN01CA12 ENA1111A |
RF Transistor, 10V, 70mA, fT=5.5GHz, NPN Single CP
UHF Wide-band Low-noise Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| MAX2680 MAX2680EUT-T MAX2680-MAX2682 MAX2681 MAX26 |
Monostable multivibrator with Schmitt-trigger inputs 14-SO 0 to 70
400MHz to 2.5GHz, Low-Noise, SiGe Downconverter Mixers
400MHz to 2.5GHz / Low-Noise / SiGe Downconverter Mixers
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Maixm
MAXIM - Dallas Semiconductor
|
| AK1545 |
3.5GHz Low Noise Integer-N Frequency Synthesizer
|
AKM
|
| MAX2680/MAX2681/MAX2682 |
400MHZ to 2.5GHZ Low-Noise SiGe Downconverter Mixers
|
Maxim Integrated Products, Inc.
|
| 26LS32A/BEA 26LS32A/B2A 26LS32A/BFA 26LS32/BEA |
Low-Noise, 2.5GHz Downconverter Mixer
Line Receiver 线路接收
|
Elpida Memory, Inc.
|
| MAX2650 MAX2650EUS-T |
DC-to-Microwave / 5V Low-Noise Amplifier
DC-to-Microwave, 5V Low-Noise Amplifier 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| OP-27EP OP-27GZ OP-27 OP-27AJ OP-27AZ OP-27BJ OP-2 |
LOW NOISE, PRECISION OPERATIONAL AMPLIFIER 低噪声，高精度运算放大器
Low Noise, Precision Operational Amplifier; Package: LCC:CER LEADLESS CHIP CARR; No of Pins: 20; Temperature Range: Military OP-AMP, 200 uV OFFSET-MAX, 8 MHz BAND WIDTH, PQCC20
Low Noise, Precision Operational Amplifier; Package: ROUND HEADER/METAL CAN; No of Pins: 8; Temperature Range: Military OP-AMP, 60 uV OFFSET-MAX, 8 MHz BAND WIDTH, MBCY8
4" CONN,COMP.,EMT,DC 低噪声，高精度运算放大器
LOW NOISE PRECISION OPERATIONAL AMPLIFIER
|
Analog Devices, Inc.
Linear Technology, Corp.
AD[Analog Devices]
|
| TGA4600-EPU |
60 GHz Low-Noise Amplifier
60GHz Low Noise Amplifier
|
TRIQUINT[TriQuint Semiconductor]
|
| K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 0 to 70 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP 0 to 70 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 2Mx32移动SDRAM 90FBGA
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
